Abstract

With the advancement of technology, the dimensions of chip goes on reducing. More and more number of transistors are embedded in a single chip. Designing gates by CMOS technology, under various second order and parasitic effects degrade overall performance and increase the delay of circuits. The Phase Change Memory (PCM) technology, due to its material properties, non-volatility and scaling efficient behavior, can be used to overcome such problems. This paper presents the design of logic gates using PCM. The performance analysis of PCM model with Carbon Nano Tube Field Effect Transistor (CNTFET) as access device has also been carried out. The advantages obtained vis-a-vis the delay and average power have been presented in the paper. The obtained results conclude that using CNTFET as access device in PCM model can be more efficient than using MOSFET as access device.

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