Abstract
We investigated a Pb(ZrxTi1-x)O3 (PZT) thin film applied in ferroelectric random access memory (FeRAM) capacitor where under-layered structure was made up of patterned Pt/IrO2/Ir electrodes separated by inter-electrode dielectric (IED) SiO2. This capacitor structure is one of the promising candidates for realizing high density FeRAMs. The PZT film grown on IED-SiO2 appeared to have Pb-deficient pyrochlore phase due to significant Pb-diffusion into IED-SiO2, which would make a detrimental effect on PZT film in the capacitor region where the PZT film was grown on isolated Pt electrode, even though growth condition for perovskite PZT film with strong (111) preferred orientation was made when the film was deposited on continuous Pt electrode.
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