Abstract
In this paper, a comparative analysis of PBTI induced device degradation in nanowire n-channel junctionless and inversion mode Multiple-Gate MOSFET(MuGFETs) has been performed. It has been observed that the threshold voltage is increased after PBTI stress and the threshold voltage variation of junctionless device is less significant than that of inversion mode device. However the degradation rate of junctionless device is less significant than that of inversion mode device. The activation energy of the device degradation is larger in inversion mode device than junctionless device. In order to analyze the more significant PBTI induced device degradation in inversion mode device than junctionless device, 3-dimensional device simulation has been performed. The electron concentration in inversion mode device is equal to the one in junctionless device but the electric field in inversion mode device is larger than junctionless device.
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