PBII processing of dielectric layers: physical aspects limitations and experimental results

Abstract

Processing of dielectric layers using a plasma-based ion implantation (PBII) technique has general implications in terms of plasma specifications and pulse characteristics. In particular, the different aspects of the processing of dielectric layers are discussed as functions of plasma density, pulse duration, and layer characteristics (thickness and permittivity). Clearly, severe limitations (true implantation energy, arcing) may appear for high-density plasmas as well as for long pulse durations when processing dielectric layers with thicknesses in the millimeter range. Typical examples of ion implantation in dielectric materials are presented, e.g. oxygen ion implantation in polymer sheets (for hydrophilic or adhesion treatments) and nitrogen implantation of polysilicon films on glass. The experimental results demonstrate the feasibility of processing dielectric layers with the PBII technique, but with severe limitations resulting from the process itself.