Abstract
Piezoelectric thick films of Pb(Zr,Ti)O3–Pb(Mn1/3Nb2/3)O3 (PZT–PMnN) with Zr:Ti ratios ranging from 0.45:0.55 to 0.60:0.40 were fabricated on a platinized silicon wafer by aerosol deposition (AD). All the films were deposited with a thickness of 10 μm with high density. By adding PMnN to 57:43 PZT, a dielectric constant as low as ∼660 was achieved while the effective piezoelectric constant was over 140 pC/N. PZT–PMnN with a Zr:Ti ratio of 57:43 thus showed a maximum piezoelectric voltage constant (g33) of 23.8 × 10−3 Vm/N and is a good candidate for high quality thick films for application to high-energy density or high sensitivity, piezoelectric energy harvesters and sensors.
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