Pb 1− xSn xTe photovoltaic diodes and diode lasers produced by proton bombardment

Abstract

N- p junction photovoltaic detectors in Pb 0.88Sn 0.12Te and laser diodes in both PbTe and Pb 0.88Sn 0.12Te fabricated using proton bombardment to create the n-type layer are reported. Zero-bias resistance area products as high as 1.4 Ω-cm 2 at 77°K and 966 Ω-cm 2 at 15°K were observed for 15-mil-square Pb 0.88Sn 0.12Te photodiodes. At 77°K, peak detectivities at 7.5 μm as high as 2.5 × 10 10 cmHz1 2 /W were measured. At 15°K, the peak detectivity occurred at 10.2 μm and in reduced background was greater than 10 12 cmHz1 2 / W . Both PbTe and Pb 0.88Sn 0.12Te laser diodes operated CW at 4.2°K. The PbTe diodes exhibited single mode CW laser operation up to at least 50°K and pulsed operation up to at least 80°K.