Abstract
To fabricate interdigitated bipolar transistors with lateral dimensions well below 1 μm, electron beam lithography and dry etching have been implemented in an on optical lithography based production process. The most demanding step is the patterning of the Ti/Pt/Au metallization layer traditionally used in these devices. Pattern definition by electron beam lithography is severely hampered by the proximity effect. This problem has been studied in detail and local exposure dose corrections are applied to realize well defined resist patterns. The resist pattern is transferred to the Au/Pt layers by argon sputter etching. In this work with lateral dimensions smaller than the thickness of the metal layers the quality of the etch profiles is seriously degraded by redeposition phenomena. However with a Ti layer patterned by lift-off as etch mask, gaps with a defined width as small as 0.6 μm have been opened.
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