Abstract
In this paper, patterned nanoscale magnetic tunnel junctions (MTJs) with different geometrical structures, including nanodisk (ND), nanoellipse (NE), nanoring (NR) and nanoelliptical ring (NER) with the scale of around 100nm and ring width of around 30nm, were fabricated, respectively. The geometrical-shape dependence of magnetic field-driven and current-induced magnetization switching (CIMS) were studied in the nanoscale magnetic tunnel junctions (MTJs). The NER-MTJs showed robust magnetization switching and low critical current density of CIMS, comparing with other geometrical-shaped MTJs. This may be due to the different distribution of current-induced Oersted field in different geometrical structures, which plays an assisted role in CIMS. The present experiments indicate that NER-MTJs may be one of the promising candidates for the cells of high-density and low-consumption spintronic devices.
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