Abstract
The growth selectivity on patterned GaAs (311)A substrates differs qualitatively from that on low-index (100) and (111) substrates. During molecular beam epitaxy of (Al,Ga)As, [01-1] oriented mesa stripes develop a fast growing convex sidewall. A continuous transition occurs towards the slow growing concave sidewall upon turning the mesa along the perpendicular [-233] direction without breaking up the growth front into microfacets. This allows their systematic combination at the corner or edge of intersecting mesa stripes appropriately inclined from [01-1] among which we highlight those involving fast growing sidewalls. The scenario, which is unique for patterned GaAs (311)A substrates, offers a novel degree of flexibility for the design of lateral functional semiconductor nanostructures.
Published Version
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