Abstract
Effects of ion-beam incidence angle on etched pattern profiles have been studied. Ion-beam etching was performed using a rotary stage and a Kaufman-type ion gun operated at a 500 V acceleration voltage and a 0.5 mA/cm2 current density. Etched patterns show a unique side wall contour which consists of two distinguishable slopes. The slope angles depend on ion-beam incidence angle and mask thickness. The side wall contour is theoretically interpreted taking into consideration the effects of both ion-beam shadowing and redeposition.
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