Abstract
The field emission properties of lanthanum monosulfide (LaS) films, deposited on Si substrates by pulsed laser deposition, have been thoroughly analyzed via the scanning anode field emission microscopy technique. Using the conventional Fowler-Nordheim relation, the work function of LaS thin films has been extracted from the slope of the plot ln(J∕F2) vs 1∕F, where J is the field emission current density and F is the local applied electric field. The threshold for an emission current density of 1mA∕cm2 occurs around a 230V∕μm electric field applied across the vacuum gap. This leads to an outstanding, reproducible effective work function value of ∼1eV across a 1cm2 sample area.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
