Abstract
High power picosecond pulse generation from a two-contact tapered two quantum well 980 nm InGaAs/GaAs diode laser is investigated using a passive Q-switching technique for the first time. Tail-free and single peak Q-switched pulses are obtained by applying reverse bias voltages in the range of 0 to −9 V to the absorber section of the device. Optical pulses with 41 ps (down to 29 ps) durations and peak powers in excess of 1.5 W are obtained in a well-defined single lobed far-field. Such an improvement in the optical pulses is attributed to a reduction of absorber recovery time.
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