Abstract
A passively modelocked GaInNAs vertical-external-cavity surface-emitting laser (VECSEL) is demonstrated for the first time. The VECSEL was optically pumped using an 808 nm semiconductor diode laser. An intracavity GaInNAs semiconductor saturable absorber mirror was used for stable self-starting modelocking and 57 mW of average output power was obtained at a centre wavelength of 1308 nm with a pulse repetition rate of 6.1 GHz and a pulse duration of 18.7 ps.
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