Abstract
Novel surface-emitting optically pumped semiconductor lasers have demonstrated >1 W modelocked and >100 W continuous wave (cw) average output power. The modelocked integrated external-cavity surface emitting laser (MIXSEL) combines the gain of vertical-external-cavity surface-emitting lasers (VECSELs) with the saturable absorber of a semiconductor saturable absorber mirror (SESAM) in one single semiconductor structure. This unique concept allows for stable and self-starting passive modelocking in a simple straight cavity. With quantum-dot based absorbers, record-high average output power was demonstrated previously, however the pulse duration was limited to 17 ps so far. Here, we present the first femtosecond MIXSEL emitting pulses with a duration as short as 620 fs at 4.8 GHz repetition rate and 101 mW average output power. The novel MIXSEL structure relies on a single low temperature grown quantum-well saturable absorber with a low saturation fluence and fast recovery dynamics. A detailed characterization of the key modelocking parameters of the absorber and the challenges for absorber integration into the MIXSEL structure are discussed.
Highlights
Pumped vertical-external-cavity surface-emitting lasers (VECSELs [1]) are attractive laser sources for applications that require high-power operation combined with excellent beam quality
The integration of the saturable absorber into the modelocked integrated external-cavity surface emitting laser (MIXSEL) structure has been challenging since key absorber parameters such as low saturation fluence and fast recovery need to be maintained with integration
We have demonstrated the first femtosecond operation of a modelocked integrated externalcavity surface-emitting laser (MIXSEL)
Summary
Pumped vertical-external-cavity surface-emitting lasers (VECSELs [1]) are attractive laser sources for applications that require high-power operation combined with excellent beam quality. (MIXSEL [13]) combines the gain of the optically pumped VECSELs with the saturable absorber of a SESAM in one single semiconductor layer stack This concept enables a higher level of integration to reduce complexity, packaging, and manufacturing cost, and allows for stable and self-starting passive modelocking in a simple straight cavity. The low temperature grown QW absorber is embedded in AlAs spacers and carefully characterized and optimized for achieving low saturation fluences and fast recovery dynamics These improvements of the structure and the saturable absorber has allowed us to obtain the shortest pulse durations from a MIXSEL to date, generating 620-fs-pulses at a repetition rate of 4.8 GHz with an average output power of 101 mW (see Fig. 1(b))
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