Abstract
Passive modelocking (PML) due to diagonal optical transition was observed in two coupled asymmetric double quantum well laser structures for the first time. Two InGaAs/GaAs QW structures with different barrier width between wells were compared. Passive modelocking in thin barrier structures was realised at reverse biases between 0.7–1.1 V when carrier tunnelling takes place. In structures with a thick barrier, PML was observed only at reverse biases above 3.3 V when the absorption edge is shifted to the lasing wavelength due to the quantum confinement Stark effect.
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