Abstract
Gallium arsenide (semiconductor) (GaAs) metal-oxide-semiconductor capacitors with fluorine-incorporated TaHfON as gate dielectric are fabricated by pre- or postdeposition fluorine plasma treatment and their electrical and physical properties are compared with a control sample without the treatment. Among the three devices, the one with postdeposition fluorine treatment exhibits better characteristics: low oxide-charge density (−3.5 × 1012 cm−2), low interface-state density (2.2 × 1012 cm−2eV−1), small flatband voltage (0.7 V), small hysteresis (45 mV), and good capacitance–voltage behavior. These should be attributed to (1) the passivating effects of fluorine atoms on the acceptorlike interface and near-interface traps, and (2) fluorine-induced suppressed growth of unstable Ga and As oxides on the GaAs substrate during postdeposition annealing.
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