Abstract
This paper reports on the effect hydrogenation has on the electrical properties of hybrid-orientation (1 1 0)/(1 0 0) direct silicon bonded interfaces. Temperature-dependent capacitance measurements and deep-level transient spectroscopy were used to evaluate the distribution of interface states following hydrogenation. Although the overall interface charge remained nearly unchanged, the interface state distribution was significantly altered, changing from a broad band of states to a narrow energy distribution positioned near mid-gap.
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