Abstract
Both the self- and nonself-aligned graded-base InP/InGaAs/InP double heterostructure bipolar transistors (DHBTs) were passivated by room-temperature deposited SiN/sub x/. Current gains were found to increase after SiN/sub x/ passivation. The leakage current of base-collector junction was greatly increased by the passivation. The leakage current made the deformation of the common-emitter I-V curve in the nonself-aligned DHBT, while this did not occur in the self-aligned DHBT. The leakage current was caused by an accumulation layer between the SiN/sub x/ and InP. The leakage current could be decreased by the annealing at 300/spl deg/C for 5 minutes.
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