Abstract
The thermal evaporation of a GaS single crystal has been used to passivate the GaAs surface. The passivation effect of GaAs surface by GaS has been studied by low-energy electron-loss spectroscopy (LEELS) and photoluminescence (PL). The LEELS spectra shows that the surface related peaks of GaAs disappeared immediately after starting the deposition, suggesting the effective passivation of dangling bonds of GaAs surface by S atoms included in the evaporated species. PL measurements suggest that the GaAs surface is effectively passivated by GaS films.
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