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Abstract
Reduction of surface recombination velocity is one of the most important issues for high-efficiency single crystalline silicon thin-film solar cells. Surface passivation effects of silicon nitride (SiNx) films deposited by direct plasma chemical vapor deposition were analyzed focusing on the polarity of fixed charges and solar cell performance. For the solar cell, epitaxial single crystalline silicon layers with a typical thickness of 10 µm were grown by atmospheric pressure chemical vapor deposition. The solar cell passivated by SiNx film with positive fixed charges showed improved internal quantum efficiency in the wavelength range of 320–500 nm, which was attributed to the effect of an induced front surface field of an n++/n+ junction as holes. A very small surface recombination velocity of 4.6 ×103 cm/s and high cell performances (η=11%, Jsc=26.3 mA/cm2, Voc=609 mV) were realized.
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