Abstract
Recent development within the field of medium voltage wide-bandgap semiconductor devices are drawing the attention from both researchers and industries, due to the demanding requirements for more efficient high-power energy conversion. The rapid development has entailed an increased awareness of the negative impact of increased rate of change in voltage, d vd t, and its derived issues caused by the inevitable parasitic capacitive couplings. This paper is dedicated to present an overview of the parasitic capacitive couplings in high-power medium voltage power electronic converter systems, using an example reference system enabled by medium voltage SiC MOSFETs. The definitions of capacitive couplings are presented and the impacts raised by parasitic capacitive couplings are reviewed. In addition, the similarities of different capacitive couplings introduced by components in practical medium voltage systems are presented and summarized. Lastly, the challenges and future work with respect to parasitic capacitive couplings in medium voltage power electronics converter systems are shared from the authors' perspective.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
