Abstract
The MEMS-based piezoresistive pressure sensor is very important nowadays and is used in many applications such as barometry applications, aerospace applications, automobiles application, industries applications, and biomedical applications. When the mechanical stress is applied to semiconductors or metal, there is a change in electrical resistivity of the material is the piezo-resistive effect. Recently pressure sensors are developed using high-end materials like CNTs, Because of their greater gauge factor (1000), and strong mechanical and electrical properties-based MEMS sensors are designed with higher performance parameters. In this study squared structured pressure sensor with dimensions of 800 µm in length and 10µmin thickness is designed using two different materials (silicon and CNTs). Stress and deformation of the square diaphragm pressure sensor for the range of pressure 0 to 3 kPa are calculated using ANSYS. It is found from the simulations results that diaphragm with CNTs materials induced more stress and deformation as compared to silicon diaphragm and hence more sensitivity was obtained.
Published Version
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