Abstract
As a possible substitute for traditional silicon technology, carbon nanotubes are now being examined. Its exceptional electrical, thermal and optical qualities increase the researcher's desire to create field-effect transistors based on carbon nanotubes. On the basis of a numerical simulation model, this research reveals the electrical properties of CNTFETs. This paper presents the non-equilibrium mobile charge density approach for simulating drain current quickly and effectively. The emphasis of the work is on the input-output characteristics of carbon nanotube field-effect transistors (CNTFETs) under ballistic settings strongly impacted by temperature, thickness and diameter.
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