Abstract
Carbon nanotubes are currently being evaluated as a potential replacement for conventional silicon technology. It has extraordinary electrical, thermal, and optical properties which intensify the interest of the researcher to develop carbon nanotube-based field-effect transistors. This paper demonstrates the electrical characteristics of CNTFETs based on a numerical simulation model. This study introduces the method of non-equilibrium mobile charge density to obtain the fast and efficient modeling of drain current. The analysis focuses on the input-output characteristics of carbon nanotube field-effect transistors (CNTFETs) considering ballistic conditions that are significantly influenced by various temperature and gate dielectric constants.
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