Abstract

We propose a new type of parametric amplifier of surface acoustic waves (SAW) on monolithic MIS structure. medium-type parametric amplifier are as follows: (1) The device can be operated without the Joule heating. (2) The pump voltage can be reduced because of the strong capacitance nonlinearity at Si-surface in MIS structure. (3) The device characteristics can be controlled by changing the gate voltage. Moreover, the device with the spatially uniform pump can be used as a tunable transducer of high-frequency SAW without the microfabrication. We develop the theory for the parametric interaction in monolithic MIS structure with the help of the crossed field model and the method of analysis of parametric interaction in propagating microwave circuits. *When the loss is neglected, we obtain the analytical expressions for the conditions under which a very high-gain amplifi- caxion occurs and the parametric generation of SAW is expected. A preliminary experiment was carried out on the n-Si/Si02/ZnO/Al structure. frequency of SAW = 222 MHz, and the pump power = 37.2 dBm. The merits of the device compared with the travelling-wave-type amplifier and the separated-

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