Abstract
In this work, amplification of surface acoustic waves (SAWs) by electron drift in a nanometer-scale two-dimensional electron gas (2DEG) is analyzed analytically. We compare the amount of acoustic power gain per SAW radian produced by electron drift in a bulk GaN thin film layer and in a GaN-based 2DEG layer. Calculations suggest that acoustic amplification in a 2DEG is independent on the SAW frequency while only a very narrow bandwidth of SAWs could be amplified in bulk. Furthermore, the peak power gain per SAW radian occurs at a more practical carrier density for a 2DEG than for a bulk material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
