Abstract
The field-effect method in electrolytes is used for finding the band structure parameters in surface layers of zero-gap semiconductors (ZGS) (CdHg)Te. It is found that the conduction band both in surface layers and in the volume of ZGS (CdHg)Te obeys the ultrarelativistic dispersion relation. The electron effective mass in surface layers of ZGS (CdHg)Te is close to the electron effective mass in the volume of ZGS (CdHg)Te. It is stated that the heavy-hole valence band both in surface layers and in the volume of ZGS (CdHg)Te has a non-parabolic dispersion relation, and that the heavy-hole effective mass is less than 0.5m0 and depends on the composition of (CdHg)Te. It is found that the position of the Fermi level in ZGS (CdHg)Te is described in the model of zero-gap semiconductors with fluctuating potential. The “step” structure in the dependences of the differential capacitance of the space-charge layer in ZGS (CdHg)Te on temperature at fixed values of the surface potential is observed experimentally for the first time. [Russian Text Ignored].
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