Abstract
ABSTRACT Available ferroelectric capacitor modeling has focused on the switching behavior associated with nonvolatile memories. Our capacitor model is suitable for mixed signal circuit design applications. The model not only reproduces the charge storage, transient polarizing current behavior and state retention occurring within the ferroelectric thin film capacitor but also models film non-idealities imprint effect, switching fatigue and leakage current. The model is implemented as a SPICE macromodel element. Model verification is performed through the comparison of spice simulations and measurement results for both ferroelectric polarization-voltage (P-V) hysteresis loop and circuit design example.
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