Abstract
The behavior of ferroelectric thin film capacitors under radiation environments is significant for the development of rad-hard ferroelectric random access memory (FeRAM). Here, we fabricated the ferroelectric thin film capacitors with 12-nm-thick HfxZr1−xO2 (HZO) and investigated the total ionizing dose (TID) effects of 60Co γ-rays radiation on them. It is found that after 60Co γ rays radiation with a total dose as high as 10 Mrad (Si), the hysteresis loops of the HZO ferroelectric thin film capacitors slightly shift to the positive bias direction, and the remanent polarization decreases by 5%. Besides, negligible changes in surface morphology, leakage current density, relative dielectric constant, dielectric loss, endurance and retention characteristics are observed. These results suggest that the HZO ferroelectric thin film capacitors have great potential in the application for highly rad-hard FeRAM.
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