Abstract
We present an analytic expression that accurately represents the dielectric function ɛ = ɛ1 + iɛ2 of InP from 1.19 to 6.57 eV for temperatures from 25 to 700 K. The original data were obtained on a InP substrate by spectroscopic ellipsometry. The analytic representation is based on the parametric model, which is known to accurately portray ɛ without unphysical assumptions. The ɛ data are successfully reconstructed by eight Gaussian-broadened polynomials and a pole and can be used to determine ɛ as a continuous function of energy and temperature within the limits given above. Our results should be useful in a number of contexts, including device design and in situ monitoring of deposition. A representative deposition example is discussed.
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