Analytic determination of the dielectric function of InSb at energies from 0.74 to 6.42 eV at temperatures from 31 to 675 K

Abstract

Dielectric functions as analytic functions of temperature are useful for nondestructive in-situ monitoring of material deposition and for device design. We present an analytic expression that accurately represents the dielectric function ɛ = ɛ 1 + iɛ 2 of InSb at energies from 0.74 to 6.42 eV for temperatures from 31 to 675 K. The original e spectra were obtained by using rotating-compensator spectroscopic ellipsometry. We used the parametric model (PM), which can accommodate the asymmetric nature of critical-point features. The InSb data are successfully reconstructed with nine PM components and yield e as a continuous function of both energy and temperature within the limits given above. Our results should be useful in a number of contexts, including device design and in-situ monitoring of deposition. A representative deposition example is discussed.