Parameter modeling of linearly doped double gate MOSFET with high-k dielectrics

Abstract

In this paper an analytical expression of surface potential, threshold voltage and drain current for Single halo Dual Material Double Gate, Double Halo Dual Material Double Gate and Double Halo Triple Material Double Gate MOSFETs are formulated by applying Gauss' law to a rectangular box in the channel region, covering the total depth of depletion region. The characteristic parameters are formulated for sub threshold regime. The uniqueness of this model lies in the fact that high-k dielectrics are used instead of Silicon dioxide. It is seen that the Triple Material Double Gate structure suppresses the short channel effects most effectively when compared to the other two. The doping profile concentrations of the two halos were considered linear with peak doping concentration at the two ends. The model results obtained by varying different parameters are compared with results obtained from the two-dimensional device simulator DESSIS. It is found that the model results tally quite effectively with those from DESSIS. So the proposed models are suitable for reducing the short channel effects and can be effectively used for devices operating in the sub-threshold region.