Abstract
Novel features of and a new technique for parameter extraction are outlined here for MOS devices with ultra-thin high-K MOS devices. These parameters include the channel doping density, the doping density profile, and the flat-band voltage—all very important for the high-K technology, besides the surface potential, the gate dielectric capacitance, and the accumulation surface potential quotient. The reliability of the new technique was confirmed by comparison with the results from other techniques. The experimental results indicate diffusion of metal impurities into the channel region during the device processing.
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