Abstract
In this study, we have attempted to interpret experimentally observed non-ideal Al pSi Schottky diode I- V and C −2− V characteristics which are due to an interface layer, interface states and fixed surface charge. A value of 0.68 eV for the barrier height qΦ Bo for Al pSi diodes without interface layer and fixed surface charge has been obtained from C −2− V characteristics and a value of 0.20 eV for the neutral level of the surface states has been found. Furthermore, the value of the barrier height qΦ Bp without fixed surface charge and the effective barrier height qΦ Bp, o are separately obtained from C −2- V characteristics. In addition, values of interface state density D it have been calculated.
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