Abstract
Efficient DC parameter extraction technique for MOS model 11, level 1100 (MM11) is outlined. The parameters are extracted step-by-step depending upon the characteristics where they play a major role. We have used particle swarm optimization (PSO) and genetic algorithm (GA) to extract parameters for NMOS device with 65 nm technology. To the best of the authors knowledge, this is the first application of PSO algorithm for MOSFET parameter extraction. It has been observed that PSO algorithm performs much better as compared to GA in terms of accuracy and consistency. The proposed extraction strategy has been verified for the same technology for 150 nm and 90 nm devices.
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