Abstract
The low temperature annealing processes in LiF crystals X-rayed at 77°K have been studied by means of paramagnetic resonance. Four types of hole centers ( V-type centers), the structures of which are known from previous work, play an important part; namely, the self-trapped holes, the H-centers, the V F -centers and the V t -centers. The relative concentrations of these defects have been measured after X-irradiation at 77°K and after subsequent pulse annealing at successively higher temperatures. Four temperature intervals were found in which the paramagnetic resonance spectra undergo significant changes in intensity. There seems to be a one-to-one correspondence between the annealing processes observed by means of paramagnetic resonance and those detected by other investigators by means of thermoluminescence, conductivity, changes of the optical absorption and of the crystal volume.
Published Version
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