Abstract
The growth kinetics and composition of thin films of Pd2Si on <111> single-crystal Si was observed by combining Auger electron spectroscopy with the in situ sputter etching. The characteristic Auger spectrum for Pd2Si was measured and separately identified by x-ray diffraction analysis. In-depth composition profiles indicated that a Si-rich region exists near the silicide/silicon interface during the diffusion-limited Pd2Si formation.
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