Abstract
Ta-Si films with different composition ratio were prepared by the pulsed laser deposition technique on a Si3N4/Si(100) substrate at room temperature. Cross-sectional transmission electron spectroscopy (TEM) and Auger electron spectroscopy in combination with Rutherford backscattering spectroscopy were employed to investigate the deposited structures. As-deposited films were found to be spontaneously modulated with composition along the growth direction, the period of the structure depending upon Si/Ta average composition ratio, and is about 50 Å in thickness. Auger electron spectroscopy analysis confirms the codeposited Ta-Si layers reveal an oscillating character of the chemical bonding. The contrast analysis of cross-sectional TEM images and the study of electron-diffraction patterns identify amorphous state (up to the resolution of analytical technique) of the deposited layers. The observed effect is attributed to the nature of the depositing flux.
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