Abstract
Silicon carbide (SiC) nanostructures have attracted significant attention for device applications due to their unique structural, electronic and catalytic properties. Here, the efficiency of three dimensional SiC nano-cauliflowers (NCs) for hydrogen gas sensing application has been investigated. We have deposited a vertically aligned, ordered Pd decorated SiC NCs directly on a silver (Ag) coated porous anodic alumina (AAO) substrate by DC magnetron cosputtering and then it used as a gas sensor without additional processing. The sensor shows remarkably high and selective responses to hydrogen gas with low detection range 2–500ppm at relatively high temperature range (30–500°C). Our results demonstrate the potential application of Pd decorated SiC NCs for fabricating highly sensitive and selective hydrogen gas sensors.
Published Version
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