Abstract
For pt.I see ibid., vol.2, p.716 (1987). The authors present applications of paired temperature spectroscopy (PATS) to deep levels in liquid encapsulated Czochralski (LEC) grown and irradiated GaAs and InP. In GaAs, the level is near the midgap and appears to belong to the EL2 family of defects. In InP, they find two levels: one at 0.34 eV and the other at 0.42 eV. They have also carried out deep level transient spectroscopy (DLTS) on these levels. The agreement between PATS and DLTS is good. The exercise establishes PATS as a successful near-isothermal technique for characterizing traps in semiconductors.
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