Abstract

The effect of A1 underlayer between Ti and TiN on the electromigration (EM) lifetime of Al stack film were compared with package-level and conventional wafer-level EM tests. The higher EM resistance of the Al stacks prepared with Ti underlayer can be best explained by their better Al (111) texture and grain size distribution than those with TiN underlayer. The surface roughness of the underlayer is related to the grain size distribution and surface roughness of Al film. The conventional wafer-level EM test results showed a similar trend with respect to Ti and TiN underlayers with less accuracy than those from package-level EM test results.

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