Abstract
ABSTRACTThe effects of Al underlayer between Ti and TiN on the electromigration (EM) lifetime of Al stack film were compared by the package-level and conventional wafer-level EM tests. The higher EM resistance of the Al stacks prepared with Ti underlayer can be best explained by their better Al (111) texture and grain size distribution than those with TiN underlayer. The surface roughness of the underlayer is related to the grain size distribution and surface roughness of Al film.
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