Abstract
The boron implantation and intrinsic layer thickness effects on the external quantum efficiency of pin photo sensor are investigated. It is found that the light absorption by p+ layer and asymmetric carrier loss phenomenon will be serious in the high implantation voltage condition, which will lead to the decrease of external quantum efficiency (EQE) of photodiode. The dark current at the range of reverse bias can be reduced through controlling the hydrogen content, film stress and intrinsic layer thickness of pin photodiode. The EQE of photodiode under red light illumination (680 nm) can be enhanced from 35.8% to 45.2% by increasing the intrinsic layer thickness from 200 nm to 300 nm.
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