Abstract
AbstractThe work is devoted to explanation of the decrease of external quantum efficiency (QE) with increase of pumping density typically observed for AlInGaN heterostrucures. It is shown as a result of numerical modeling that while the increase of QE at low pumping density is due to the competition between radiative and non‐radiative recombination, the decrease of QE at large pumping density is caused by decrease of injection efficiency for the holes into the active area. A modified LED heterostructure is suggested, for which the effect of QE decreasing is not expected. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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