Abstract
AbstractRoom temperature top‐gate self‐aligned amorphous InGaZnO TFTs were successfully fabricated on colorless polyimide plastic substrates for the first time. All these thin films were deposited by sputtering system at room temperature. The maximum field‐effect mobility is 48.5 cm2/V‐s, the subthreshold swing is 0.1 V/decade, and the threshold voltage is −1V.
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