Abstract

We propose a novel gate driver circuit using low‐temperature polycrystalline silicon and oxide (LTPO) thin‐film transistors (TFTs). The proposed circuit operates well when oxide TFTs have VTH of −7.5 V, which is very depletion mode. In addition, by utilizing extremely low off‐state current of oxide TFTs, ultra‐low power consumption can be achieved. The proposed circuit consists of only six TFTs, four p‐type LTPS and two n‐type a‐IGZO TFTs, without capacitor. The fabricated circuit operates with a pulse width of 1 μs corresponding to operating speed of 500 kHz with very small pitch. The proposed circuit can be applied to ultra‐high definition (UHD) and narrow bezel AMOLED display.

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