Abstract
A new method for enhancing the mobility of the polysilicon thin-film transistors (poly-Si TFT) by pattern-dependent metal-induced- lateral-crystallization (PDMILC) with different device dimensions were successfully demonstrated and characterized. The experimental results indicate that the field effect mobility of PDMILC TFT was enhanced as the channel width decreased, because the lateral length of its poly-Si grain was increased. For the gate length of 2 um, the ten nano-wire channels (M10) PDMILC poly-Si TFT had the greatest mobility of 107.79 cm2/Vs and the smallest subthreshold swing (SS) of 0.23 V/dec. The mobility also increased with the decline in the gate length, because the number of poly-Si grain boundary defects was reduced.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
