Abstract
Antimony selenide (Sb2Se3) has been extensively studied in photodetectors (PDs) for its extraordinary photoelectric properties. In this study, we report a new attempt to apply ferroelectric material P(VDF-TrFE)) in Sb2Se3 PDs. The P(VDF-TrFE) thin films were coated on Sb2Se3, which effectively improved the interface quality between the Sb2Se3 thin films and the C electrode, leading to a smaller leakage current. Moreover, due to the ferroelectric effect of P(VDF-TrFE), the remanent polarization enhances the separation and transmission of photogenerated carriers, which significantly improves the photoelectric performance of Sb2Se3 PDs. Experimental results show that the insertion of P(VDF-TrFE) enables the device to have a low dark current (from 2.0 × 10−3 to 1.6 × 10−4 μA) and ultra-high On/Off ratio (from 5.06 × 102 to 1.26 × 104). In addition, the resulting device exhibits weak light detection ability with a photo-responsive at a weak light of 5 × 10−6 W cm−2.
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