Abstract
Antimony selenide (Sb2Se3) thin films were prepared on SnO2 coated glass substrates from acidic aqueous solution by potentiostatic electrodeposition and then post annealed at 300°C in Ar atmosphere. Cyclic voltammetry (CV), energy dispersive X-ray spectroscopy (EDS), and environmental scanning electron microscope (ESEM) studies were performed on as-deposited Sb2Se3 thin films to obtain suitable electrodeposition conditions. The annealed film shows improved crystallinity with a basic structure of orthorhombic Sb2Se3, and exhibits an optical absorption coefficient of higher than 105cm−1 in the visible region and an optical band gap of 1.04±0.01eV. Photoelectrochemical (PEC) tests confirm the p-type conductivity and good photovoltaic conversion characteristics of the annealed film.
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