Abstract
The discovery process and the mechanism of p-type surface layer accumulation of hydrogen terminated diamond surfaces have been reviewed from the point of surface characterization and carrier formation near the subsurface. Since diamond is an insulating material, the surface density is as high as the order of 1013 cm−2 that is enough for high performance field effect transistors to be realized. The surface dipole formed by hydrogen-carbon bonds has a crucial role for the surface band structure of diamond. Also important is several types of negatively charged adsorbates necessary for charge neutrality condition and hole accumulation. New models for carrier emergence such as a transfer doping model have been discussed.
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